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一维陶瓷相可通过“拔出”、“裂纹桥接”和“裂纹偏转”等增强机制实现对陶瓷材料强韧化的目的。碳化硅具有高硬度、高热导率、优异的化学稳定性和高电导率，特别是一维形貌的碳化硅作为增强相在陶瓷材料、复合材料和耐火材料等领域广泛应用，但一维形貌的碳化硅制备工艺复杂、成本高，特别是高比表面积及易团聚严重限制了其应用及强韧化效果。因此，制备高纯、易分散与高长径比的一维碳化硅更有意义。生长机制及制备工艺对一维碳化硅的形貌特征影响显著，分析一维碳化硅生长机制为其形貌特征的调控提供理论依据，进一步通过制备方法的优化可提高碳化硅粉体纯度，改善形貌单一、易团聚等问题。本文对一维碳化硅合成相关研究进行综述，分析了不同制备方法中一维碳化硅的生长条件、热力–动力学基础、工艺特征及生长机制，对比了碳热还原法、静电纺丝法、自蔓延高温合成法、熔盐法等制备产物的形貌特征，最后对高性能一维碳化硅合成进行了展望。
Abstract：One-dimensional ceramic phases can effectively fulfill the objective of strengthening and toughening ceramic materials via strengthening mechanisms including"pull-out","crack bridging",and"crack deflection".These mechanisms enhance material performance via forming a bridge zone at the crack tip,which generates closing stresses,alters the crack propagation path,and dissipates energy through work done against interfacial mechanical resistance during fiber pullout.This significantly improves the mechanical properties and service stability of ceramics,thereby enabling their broader application in high-end fields such as aerospace,electronics,information technology,and energy systems.Silicon carbide (SiC) demonstrates an irreplaceable value in ceramic matrix composites,refractory components,and toughened functional coatings due to its exceptional combination of high hardness,thermal conductivity,chemical stability,and electrical conductivity.In particular,one-dimensional SiC with a high aspect ratio can effectively distribute stress,establish continuous load transfer pathways,and synergistically interact with multiple strengthening and toughening mechanisms,thus meeting the stringent mechanical and functional demands under extreme operating conditions.However,the large-scale application of one-dimensional SiC still faces several technical challenges,i.e.,synthesis methods often require high-temperature sintering or vapor deposition processes,along with complex template-assisted fabrication techniques,resulting in high production costs.Moreover,the high specific surface area of one-dimensional SiC leads to severe agglomeration,which compromises dispersion uniformity and markedly reduces the efficiency of reinforcement and toughening.Meanwhile,the existing synthesis processes are prone to yielding products with limited morphological diversity and insufficient purity,thereby failing to meet the stringent material performance requirements of high-end applications.Consequently,developing one-dimensional SiC preparation technologies that integrate high purity,excellent dispersibility,and high aspect ratio becomes a critical strategy for overcoming the existing application barriers.The morphological features and functional properties of one–dimensional SiC are fundamentally governed via the growth mechanisms and the precision of process control during synthesis.A thorough understanding of these growth mechanisms can provide an essential theoretical guidance for achieving precise morphological regulation.It is thus possible to establish a systematic correlation among"process parameters,microstructural morphology,and macroscopic properties"via elucidating the thermodynamic principles across various synthesis systems and identifying the effects of key parameters on SiC crystal growth.Optimizing the synthesis process can thus enhance the purity of one-dimensional SiC and effectively address common challenges such as morphological uniformity and particle agglomeration.Based on this framework,this review systematically represents recent advances on SiC synthesis,with a particular emphasis on major preparation methods including carbothermal reduction,electrospinning,self-propagating high-temperature synthesis,and molten salt synthesis.The review analyzes their respective growth conditions,thermal mechanisms,process characteristics,and dynamic growth mechanisms.Furthermore,the review clarifies the advantages and limitations of each technological pathway and outlines future research direction via comparing the resulting product morphologies and key performance indicators such as purity across these methods.Summary and prospects This review systematically compares the advantages and disadvantages of various synthetic methods.The existing challenges such as complex synthesis processes,high production costs,significant impurity content in products,non-uniform morphology,and a tendency toward particle agglomeration remain prominent.Exploring low-cost silicon and organic carbon sources with effective impurity removal capabilities and tunable morphological properties thus represents a key direction for future research and development.Furthermore,the construction of core–shell and other structures can solve a problem of agglomeration.Consequently,advancing composite phase preparation technologies and designing sophisticated nanostructures,including core–shell configurations,are anticipated to be critical future developments.Elucidating the influence of key parameters (i.e.,gas-phase partial pressure ratios) on the growth behavior of one-dimensional SiC materials,and establishing a process-morphology correlation model through molecular dynamics simulations can enable a precise control over product characteristics and hold a substantial potential for future applications.
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基本信息:
DOI：10.14062/j.issn.0454-5648.20250594
中图分类号:TQ174.6
引用信息:
[1]种小川,乔佳其,肖国庆,等.一维SiC粉体合成方法研究进展[J].硅酸盐学报,2026,54(06):2157-2170.DOI:10.14062/j.issn.0454-5648.20250594.
基金信息:
国家自然科学基金(52272027,52372034); 陕西省重点研发计划(2023-YBGY-421,2023-GHZD-51); 陕西省自然科学基金(2025JC-YBQN-480)
2026-05-13
2026-05-13
2026-05-13