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为解决硫化过程中 Sn 元素损失的问题以及减少 MoS2的厚度，采用磁控溅射技术，在基于钼的钠钙玻璃衬底上采用双周期溅射的方法，以 ZnO/SnO2/Cu 的顺序制备了含氧的 Cu-Zn-Sn 预制层。结果表明：SnO2以及 ZnO 的使用很好的抑制了 Sn 元素的损失以及 MoS2层的形成，而且在 590 ℃的硫化温度下能制备出表面平整、晶粒致密、晶体结构较好的单相Cu_2ZnSnS4 (CZTS)吸收层薄膜。最后，制备出结构完整的 CZTS 薄膜太阳电池，在 590 ℃硫化制备的 CZTS 薄膜太阳电池效率最高，其开路电压为 590 mV，短路电流密度为 22.09 mA/cm2，填充因子为 39.28%，光电转换效率达到 5.12%，为今后制备高效 CZTS 薄膜太阳电池起到了推动作用。
Abstract：In order to solve a problem of Sn-loss and reduce the thickness of MoS2 during the sulfurization process, the oxygen containing Cu-Zn-Sn precursor thin films were prepared on Mo-coated soda lime glasses via magnetron sputtering ZnO/SnO2/Cu.The results show that the Sn-loss and the formation of MoS2 are well inhibited by the utilization of SnO2 and ZnO. The single-phase CZTS absorbed thin films with the smooth surface, dense grains and good crystal structure can be prepared at 590 ℃. Also, the CZTS solar cells from oxygen containing precursors annealed at 590 ℃ have an optimum power conversion efficiency (PCE) of5.12% with an open circuit voltage of 590 mV, a short circuit current density of 22.09 mA/cm2 and a fill factor of 39.28%.
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基本信息:
DOI：10.14062/j.issn.0454-5648.20210537
中图分类号:TM914.42
引用信息:
[1]李新毓,张道永,李祥,等.磁控溅射制备Cu_2ZnSnS_4薄膜太阳电池[J].硅酸盐学报,2022,50(05):1257-1262.DOI:10.14062/j.issn.0454-5648.20210537.
基金信息:
国家自然科学基金(61941401)资助项目
2022-04-01
2022-04-01
2022-04-01