| 359 | 16 | 26 |
| 下载次数 | 被引频次 | 阅读次数 |
通过研究微米粉体、纳米粉体和纳米胶体TiO2掺杂的ZnO压敏电阻的电性能,发现纳米胶体TiO2掺杂的ZnO压敏电阻具有较低的电压梯度和漏电流,而非线性系数较高。对电性能结果的分析表明:在ZnO–Bi2O3–TiO2低压压敏电阻中,晶界击穿电压不是一个固定值;漏电流中的线性分量对TiO2掺杂的ZnO压敏电阻电学性能影响很大。
Abstract：The electric properties of ZnO varistors doped with TiO2 in different forms including micrometer powder, nanometer pow- der and nanometer sol were presented. The results show that lower breakdown voltage, leakage current and better nonlinear coeffi- cient are obtained for the sample doped with nano-sol TiO2. The breakdown voltage of grain boundary is not a constant for the ZnO–Bi2O3–TiO2 low-voltage varistors. And the linear part of the leakage current has great effects on the electric properties of the samples doped with TiO2.
[1]韩述斌,吴德喜.掺杂TiO2对ZnO压敏电阻器的性能影响[J].传感器技术,1996(3):20–22.HAN Shubing,WU Dexi.J Transducer Technol(in Chinese),1996(3):20–22.
[2]张从春,周东祥.低压ZnO压敏电阻材料研究及发展概况[J].功能材料,2001,32(4):343–347.ZHANG Congchun,ZHOU Dongxiang.J Funct Mater(in Chinese),2001,32(4):343–347.
[3]GUPTA T K.Application of zinc oxide varistors[J].J Am Ceram Soc,1990,73(7):1817–1840.
[4]LEVINSON M L,PHILIPP H R.Oxide nonlinear conductors:a review[J].Mater Res Soc Symp Proc,1990,195:639–656.
[5]LUO Jian,WANG Haifeng,CHIANG Yet-Ming.Origin of solid-state activated sintering in Bi2O3-doped ZnO[J].J Am Ceram Soc,1999,82(4):916–920.
[6]DE LA RUBIA M A,FERNANDEZ J F,CABALLERO A C.Equilib-rium phases in the Bi2O3-rich region of the ZnO–Bi2O3system[J].JEur Ceram Soc,2005,25:2215–2217.
[7]ZHANG Congchun,HU Yunxiang,LU Wenzhong,et al.Influence of TiO2/Sb2O3ratio on ZnO varistor ceramics[J].J Eur Ceram Soc,2002,22:61–65.
[8]BERNIK S,DANEU N,RE?NIK A.Inversion boundary induced grain growth in TiO2or Sb2O3doped ZnO-based varistor ceramics[J].J Eur Ceram Soc,2004,24:3703–3708.
[9]SUZIKI H,BRADT R C.Grain growth of ZnO in ZnO–Bi2O3ceramics with TiO2additional[J].J Am Ceram Soc,1995,78(5):1354–1360.
[10]SUNG G Y,KIM CH.Anisotropic grain growth of ZnO grain in the varistor system ZnO–Bi2O3–MnO–TiO2[J].Adv Ceram Mater,1988,3(6):604–606.
[11]TAKEMURA T,KOBAYASHI M.Effects of bismuth sesquioxide on the characteristics of ZnO varistors[J].J Am Ceram Soc,1986,69:430–436.
[12]张从春,周东祥,龚树萍,等.TiO2掺杂对低压ZnO压敏电阻性能的影响[J].压电与声光,2001,23(3):195–197.ZHANG Congchun,ZHOU Dongxiang,GONG Shuping,et al.Piezo-electrics Acoustoopt(in Chinese),2001,23(3):195–197.
[13]莫以豪,李标荣,周国良.半导体陶瓷及其敏感元件[M].上海:上海科学技术出版社,1983.235–283.MO Yihao,LI Biaorong,ZHOU Guoliang.Semiconductor Ceramics and Sensitive Components(in Chinese).Shanghai:Shanghai Scientific and Technological Press,1983.235–238.
[14]MAHAN G D,LEVINSON L M,PHILIPP H R.Theory of conduction in zinc oxide varistors[J].J Appl Phys,1979,50(4):2799–2812.
[15]PEIGNEY A,CARLES V,ROUSSET A.Phase transformation and microstructure evolution during the sintering of bismuth–manganese chemically doped zinc oxide powders[J].Mater Res Bull,1996,31(5):503–512.
[16]周东祥,章天金.低压氧化锌压敏陶瓷的显微结构及其电学性能的研究[J].功能材料,2000,31(1):66–68.ZHOU Dongxiang,ZHANG Tianjin.J Funct Mater(in Chinese),2000,31(1):66–68.
[17]EMTAGE P R.The physics of zinc oxide varistors[J].J Appl Phys,1977,48(10):4372–4384.
基本信息:
中图分类号:TB34
引用信息:
[1]林枞,徐政,孙丹峰.TiO_2掺杂对ZnO-Bi_2O_3-TiO_2低压压敏电阻电学性能的影响[J].硅酸盐学报,2007,No.212(01):21-25.
2007-01-30
2007-01-30