| 733 | 6 | 308 |
| 下载次数 | 被引频次 | 阅读次数 |
对铜铟镓硒(CuInGaSe2,CIGS)薄膜太阳电池及关键薄膜材料的研究现状及发展方向进行了介绍。重点介绍了一种低成本制备高质量CIGS薄膜的非真空液相法技术,电池转换效率达13.83%。高性能关键电池材料的制备是电池高效和低成本的重要途径,可以实现薄膜太阳电池性能的稳定提升和技术的可持续发展。
Abstract：This review presents recent developments on CuInGaSe2(CIGS) thin film solar cells and the key solar materials(such as surface-textured ZnO:Al transparent conducting films,graphene,and anti-reflection SiO2 coatings).A route to fabricate CIGS solar cells,which belongs to a non-vacuum low-cost method for producing CIGS solar cells,is proposed.The photovoltaic efficiency of the solar cell can be 13.83%.The fabrication of high performance key materials is the main route to reduce the cost and improve the efficiency of the solar cells which can realize the stable enhancement of the properties and the sustainable development of the photovoltaic cells.
[1]OTTEA K,MAKHOVAB L,BRAUNA A,et al.Flexible Cu(In,Ga)Se_2 thin-film solar cells for space application[J].Thin Solid Films,2006, 511-512:613-622.
[2]COMPOUND semiconductor.ZSW Researchers Break Own CIGS Efficiency Record and Hit 20.3%.(2010-08-25)[2011-01-11].http:// compoundsemiconductor.net/csc/news-details.php?id=19732311.
[3]ADURODIJA F O,SONG J,KIM S D,et al.Growth of CuInSe_2 thin films by high vapour Se treatment of co-sputtered Cu-In alloy in a graphite container[J],Thin Solid Films,1999,338:13-19.
[4]HAN D L,ZHANG G,ZHUANG D M,et al.Influences of flux of carrier gas on microstructure and morphologies of CIGs films:Proceedings of ISES Solar World Congress:Solar Energy and Human Settlement [C],2007:1289-1294.
[5]XUE Y M,XU C M,ZHANG L,et al.Evolution of(In,Ga)_2Se_3-Cu rich-In(Ga) rich of CIGS thin films[J].Optoelectron Laser,2008,19: 348-351.
[6]Nanosolar.Nanosolar ups funding to 0.5 billion;Partners for utility power.(2008-08-27)[2011-01-11].http://www.nanosolar.com/company/ blog/nanosolar-ups-funding-05-billion-partners-utility-power.
[7]Sustainable Business.com.Nanosolar Inaugurates German Production Plant.(2009-09-10)[2011-01-11].http://www.sustainablebusiness.com/ index.cfm/go/news.display/id/18847.
[8]Solar Feeds.HelioVolt claims CIGS thin film efficiency record.(2008-05- 12)[2011-01-11].http://solarfeeds.com/submit/701-heliovolt-claims- ??cigs-thin-film-efficiency-record.
[9]Reuters.IBM links with Japan's TOK to develop solar technology. (2008-06-16)[2011 -01 -11].http://uk.reuters.com/article/idUKN 1542019820080616.
[10]黄富强,王耀明.铜铟镓硫硒薄膜太阳电池光吸收层的制备方法[P].CN Patent,200710173785.2.2007-11-16. HUANG Fuqiang,WANG Yaoming.A method for preparing light absorption layer of copper-indiumgallium-sulfurselenium thin film solar cells(in Chinese).CN Patent,200710173785.2.2010-02-16.
[11]黄富强,王耀明.铜铟镓硫硒薄膜太阳电池光吸收层的制备方法[P]. PCT/CN专利,2008/073805.2008-07-26. HUANG Fuqiang,WANG Yaoming.A method for preparing light absorption layer of copper-indiumgallium-sulfurselenium thin film solar cells(in Chinese).PCT/CN Patent,2008/073805.2008-07-26.
[12]GRANQVIST C G,Window coatings for the future[J].Thin Solid Films,1990,193-194:730-741.
[13]GINLEY D S,BRIGHT C,eds.Transparent conducting oxides[P]. MRS Bull,2000,25:15-18.
[14]KIM H,HORWITZ J S,KUSHTO G P,et al,Indium tin oxide thin films grown on flexible plastic substrates by pulsed-laser deposition for organic light-emitting diodes[J].Appl Phys Lett,2001,79:284- 286.
[15]YOO J,LEE J,KIM S,et al.High transmittance and low resistive ZnO:Al films for thin film solar cells[J].Thin Solid Films,2005,480- 481:213-217.
[16]TOHSOPHON T,HUPKES J,SIEKMANN H,et al.High rate direct current magnetron sputtered and texture-etched zinc oxide films for silicon thin film solar cells[J].Thin Solid Films,2008,516:4628- 4632.
[17]FAY S,KROLL U,BUCHER C,et al.Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells:temperature-induced morphological changes[J].Sol Energy Mater Sol Cells,2005,86: 385-397.
[18]BERGINSKI M,HUPKES J,REETZ W,et al.Recent development on surface-textured ZnO:Al films prepared by sputtering for thin-film solar cell application[J].Thin Solid Films,2008,516:5836-5841.
[19]CALNAN S,HUPKES J,RECH B,et al.High deposition rate aluminium -doped zinc oxide films with highly efficient light trapping for silicon thin film solar cells[J].Thin Solid Films,2008,516:1242- 1248.
[20]PARK J S,PARK H J,HAHN Y B,et al.Dry etching of ZnO films and plasma-induced damage to optical properties[J].J Vac Sci Technol B, 2003,21:800-803.
[21]WAN D Y,HUANG F Q,WANG Y M,et al.Highly surface-textured ZnO:Al films fabricated by controlling the nucleation and growth separately for solar cell applications[J].ACS Appl Mater Interface, 2010,2:2147-2152.
[22]WANG Z,WAN D Y,HUANG F Q,et al,Electrical and optical properties of ZnO:Al films deposited by oxygen-deficient targets[J]. Appl Surf Sci,(accepted).
[23]NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.Electric field effect in atomically thin carbon films[J].Science,2004,306:666-669.
[24]GEIM A K,NOVOSELOV K S.The rise of grapheme[J].Nat Mater, 2007,6:183-191.
[25]BALANDIN A A,GHOSH S,BAO W Z,et al.Superior thermal conductivity of single-layer grapheme[J].Nano Lett,2008,8:902- 907.
[26]LEE C,WEI X D,KYSAR J W,et al.Measurement of the elastic properties and intrinsic strength of monolayer grapheme[J].Science, 2008,321:385-388.
[27]NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.Two-dimensional gas of massless Dirac fermions in grapheme[J].Nature,2005, 438:197-200.
[28]ZHANG Y B,TAN Y W,STORMER H L,et al.Experimental observation of the quantum Hall effect and Berry's phase in grapheme[J]. Nature,2005,438:201-204.
[29]KIM K S,ZHAO Y,JANG H,et al.Large-scale pattern growth of graphene films for stretchable transparent electrodes[J].Nature,2009, 457:706-710.
[30]NAIR R R,BLAKE P,GRIGORENKO A N,et al.Fine structure constant defines visual transparency of grapheme[J].Science,2008, 320:1308.
[31]黄富强,林天全.一种制备高质量石墨烯的方法[P].CN Patent, 201010291891.2.2010-02-16. HUANG Fuqing,LIN Tianquan.A new method to fabricate high quality grapheme(in Chinese).CN Patent,201010291891.2.2010-02-16.
[32]LIN T Q,HUANG F Q,LIANG J,et al.A facile preparation route for boron-doped graphene,and its CdTe solar cell application[J].Energy Environ Sci,DOI:10.1039/c0ee00512f(online).
[33]LUQUE A,HEGEDUS S.Handbook of Photovoltaic Science and Engineering[M].Wiley:New York,2003.
[34]HINZE P,DISLICH H.Anti-reflecting light-scattering coatings via the sol-gel-procedure[J],J Non-Cryst Solids,1986,82:411-416.
[35]WALHEIM S,SCHAFFER E,MLYNEK J,et al.Nanophase-separated polymer films as high-performance antireflection coatings[J].Science, 1999,283:520-522.
[36]黄富强,李德增,梁军.一种复合宽带减反增透薄膜及其制备方法[P].CN Patent,201010571958.8.2010-12-21. HUANG Fuqiang,LI Dezeng,LIANG Jun.A method for preparing a composite coating with broadband antireflection properties(in Chinese) .CN Patent,201010571958.8.2010-12-21.
[37]黄富强,李德增.一种宽带减反增透纳米结构及其制备方法.CN Patent,201010571961.X.2010-12-21. HUANG Fuqiang,LI Dezeng.A method for preparing a nanostructure with broadband antireflection properties(in Chinese).CN Patent, 201010571961.X.2010-12-21.
[38]黄富强,李德增.有机模板掺杂制备孔隙率可调控纳米多孔减反增透薄膜的方法.CN Patent,201010571940.8.2010-12-21. HUANG Fuqiang,LI Dezeng.A method for preparing nanoporous coatings with controllable porosity by organic template(in Chinese). CN Patent,201010571940,8.2010-12-21.
[39]XIAO Y,SHEN J,XIE Z,et al.Microstructure control of nanoporous silica thin film prepared by sol-gel process[J].J Mater Sci Technol, 2007,23:504-508.
基本信息:
DOI：10.14062/j.issn.0454-5648.2011.04.010
中图分类号:TM914.42
引用信息:
[1]万冬云,黄富强.CuInGaSe_2薄膜太阳电池与关键薄膜材料的研究进展[J].硅酸盐学报,2011,39(04):611-618.DOI:10.14062/j.issn.0454-5648.2011.04.010.
基金信息:
国家“973”计划(2007CB936704);; 院知识创新重要方向项目(083YC6T60G);; 上海自然科学基金(11ZR1441900)资助项目
2011-04-15
2011-04-15