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以自制[0001]正晶向SiC衬底为籽晶,采用物理气相传输法制备了直径42 mm、厚度700μm的AlN单晶层。介绍了晶体生长系统和生长工艺条件;分析了样品的相组成和形貌。结果表明:样品中SiC–AlN界面明晰,AlN单晶层透明、形貌平整,具有微台阶表面特征。Raman光谱和X射线衍射测试显示该层结晶性好,无杂质相,为典型的2H单晶晶型,生长面为标准的c面正晶向。
Abstract：A great AlN single crystal layer with the size of 42 mm in diameter and 700 μm in thickness was grown on SiC seed sub-strate by a physical vapor transport method.The crystal growth system and process condition were introduced.The phase constitutes and morphology of the sample grown was analyzed.The results show that the SiC–AlN interface in the crystal appears clear,and the AlN layer is translucent and planar with the microstep surface character.It is indicated that the AlN layer has a great crystallization degree and does not contain any impurity phases.The polytype of the grown AlN single crystal is a wurtzite-2H type structure and its growth surface is a perfect oriented c plane.
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基本信息:
中图分类号:O782
引用信息:
[1]齐海涛,洪颖,王香泉,等.物理气相传输法制备大面积AlN单晶[J].硅酸盐学报,2013,41(06):803-807.
2013-05-21
2013-05-21
2013-05-21