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以氯化亚锡、硫代乙酰胺、三氯化锑为反应物,采用化学浴沉积法在玻璃衬底上沉积不同锑掺杂量(摩尔分数)硫化锡(Sn S:Sb)膜,研究了锑掺杂量对薄膜晶相结构、表面形貌和光电性能的影响。结果表明:锑掺杂Sn S薄膜是具有正交结构多晶薄膜,薄膜为纳米片组装成的花状球形颗粒。随着Sb掺杂量由1.8%增加到7.2%,其相应的禁带宽度从0.93 e V增加到1.30 e V。随着Sb掺杂量的增加,Sn S薄膜的电阻率呈现先下降后增大趋势,当Sb掺杂量为3.6%时,其最小值为5.21×103?·cm。
Abstract：Sb-doped tin sulphide(Sn S:Sb) thin films with different antimony contents(in mole fraction) were grown on a glass substrate via chemical bath deposition. The precursor solution was prepared from tin(II) chloride, thioacetamide and antimony trichloride. The influence of the content of Sb-doped on the crystal structure, morphology and photoelectric property was investigated. The results indicate that the films are polycrystalline Sn S:Sb with the orthorhombic structure. The nanoflakes assembled flower-like spherical grains occur on the surface. The optical energy band gap value range from 0.93 to 1.3 e V were determined based on the transmittance spectra. The resistivity of Sn S:Sb film firstly decreases and then increases with increasing the content of Sb/Sn ratio. The minimum resistivity is 5.21×103 ?·cm at a doping ratio of 3.6%.
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基本信息:
DOI：10.14062/j.issn.0454-5648.2015.12.14
中图分类号:TB383.2
引用信息:
[1]夏冬林,徐俊,黄波.化学浴沉积法制备Sb掺杂SnS薄膜[J].硅酸盐学报,2015,43(12):1759-1764.DOI:10.14062/j.issn.0454-5648.2015.12.14.
基金信息:
武汉市科技计划(2015010101010006)资助
2015-11-19
2015-11-19
2015-11-19