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2021, 06, v.49 1111-1124
Sb_2Te3基热电薄膜的研究进展
基金项目(Foundation): 国家自然科学基金(51972029); 国家重点研发计划
邮箱(Email): ;;
DOI: 10.14062/j.issn.0454-5648.20200617
投稿时间: 2020-08-17
投稿日期(年): 2020
修回时间: 2021-04-26
终审时间: 2021-04-13
终审日期(年): 2021
审稿周期(年): 1
发布时间: 2021-04-06
出版时间: 2021-04-06
网络发布时间: 2021-04-06
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摘要:

基于热电薄膜的微型热电器件在微区制冷、温差发电等领域具有广阔应用前景。具有高功率因子、ZT值的热电薄膜对微型热电器件的性能至关重要。Sb_2Te3基材料是室温下性能优异的p型热电材料。然而,目前Sb_2Te3基薄膜的热电性能仍然不能满足实际应用的需求。简述了热电材料研究的相关背景,介绍了Sb_2Te3的晶体结构,概述了Sb_2Te3基薄膜的常用制备技术,从提高功率因子和降低热导率2方面综述了提高Sb_2Te3基薄膜热电性能的方法。重点介绍了材料组织、微观结构与热电性能的关系,即缺陷、择优取向、纳米颗粒、超晶格、有机无机杂化等对Sb_2Te3基薄膜热电性能的影响。此外,对Sb_2Te3基热电薄膜的发展方向予以展望。

Abstract:

Micro thermoelectric devices based on thermoelectric films have promising applications in various fields such as micro-zone refrigeration and power generation.Thermoelectric films with high power factor and large ZT values are critical materials in these devices.Sb_2Te3-based materials are outstanding p-type thermoelectric materials at room temperature.However,the thermoelectric properties of Sb_2Te3-based thin films cannot meet the requirement of practical applications.The research background of thermoelectric materials is briefly introduced,the crystal structure of Sb_2Te3 is discussed,the preparation techniques of Sb_2Te3-based thin films are outlined,and the methods of improving the power factor and reducing the thermal conductivity of Sb_2Te3-based thin films are summarized.In particular,the effects of microstructure on thermoelectric properties are focused on to elucidate the mechanism of improving thermoelectric properties of the films,which includes defects,preferential orientation,nanoparticles,superlattice,organic-inorganic hybridization,and so on.In addition,the future research directions for Sb_2Te3-based thermoelectric thin films are discussed.

参考文献

[1] ZHU T J, LIU Y T, FU C G, et al. Compromise and synergy in high-efficiency thermoelectric materials[J]. Adv Mater, 2017, 29(14):1605884.

[2] LI C, JIANG F, LIU C, et al. Present and future thermoelectric materials toward wearable energy harvesting[J]. Appl Mater Today,2019, 15:543-557.

[3] SOLEIMANI Z, ZORAS S, CERANIC B, et al. A review on recent developments of thermoelectric materials for room-temperature applications[J]. Sustain Energy Techn, 2020, 37:100604.

[4] YU Y, ZHU W, KONG X, et al. Recent development and application of thin-film thermoelectric cooler[J]. Front Chem Sci Eng, 2020, 14(4):492-503.

[5] YANG L, CHEN Z G, DARGUSCH M S, et al. High performance thermoelectric materials:Progress and their applications[J]. Adv Energy Mater, 2018, 8(6):1701797.

[6] ELSHEIKH M H, SHNAWAH D A, SABRI M F M, et al. A review on thermoelectric renewable energy:Principle parameters that affect their performance[J]. Renew Sust Energ Rev, 2014, 30:337-355.

[7] SNYDER G J, TOBERER E S. Complex thermoelectric materials[J].Nat Mater, 2008, 7(2):105-114.

[8] HE J, TRITT T M. Advances in thermoelectric materials research:Looking back and moving forward[J]. Science, 2017, 357(6358):eaak9997.

[9]张宗委,王心宇,刘一杰,等.热电能源材料研究进展[J].硅酸盐学报, 2018, 46(2):288-305.ZHANG Zongwei, WENG Xinyu, LIU Yijie, et al. J Chin Ceram Soc,2018, 46(2):288-305.

[10] MAO J, LIU Z, REN Z. Size effect in thermoelectric materials[J]. npj Quantum Mater, 2016, 1(1):16028.

[11] HICKS L, DRESSELHAUS M. Use of quantum-well superlattices to obtain a high figure of merit from nonconventional thermoelectric materials[J]. MRS Online Proceedings Library, 1993, 326:413-418.

[12] HICKS L, DRESSELHAUS M S. Thermoelectric figure of merit of a one-dimensional conductor[J]. Phys Rev B, 1993, 47(24):16631-16643.

[13] HICKS L, DRESSELHAUS M S. Effect of quantum-well structures on the thermoelectric figure of merit[J]. Phys Rev B, 1993, 47(19):12727-12731.

[14] FENG J J, ZHU W, DENG Y. An overview of thermoelectric films:Fabrication techniques, classification, and regulation methods[J]. Chin Phys B, 2018, 27(4):047210.

[15] NOZARIASBMARZ A, COLLINS H, DSOUZA K, et al. Review of wearable thermoelectric energy harvesting:From body temperature to electronic systems[J]. Appl Energ, 2020, 258:114069.

[16] DU Y, XU J Y, PAUL B, et al. Flexible thermoelectric materials and devices[J]. Appl Mater Today, 2018, 12:366-388.

[17] YAN J, LIAO X, YAN D, et al. Review of micro thermoelectric generator[J]. J Microelectromech S, 2018, 27(1):1-18.

[18] NOZARIASBMARZ A, SUAREZ F, DYCUS J H, et al.Thermoelectric generators for wearable body heat harvesting:Material and device concurrent optimization[J]. Nano Energy, 2020, 67:104265.

[19] ROWE D M. CRC Handbook of Thermoelectrics[M]. Florida:CRC press, 2018:211-213.

[20] NOLAS G S, SHARP J, GOLDSMID J. Thermoelectrics:basic principles and new materials developments[M]. New York:Springer-Verlag Berlin Heidelberg, 2013:123-131.

[21] POUDEL B, HAO Q, MA Y, et al. High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys[J]. Science,2008, 320(5876):634-638.

[22] CHEN Y, HOU X, MA C, et al. Review of development status of Bi2Te3-based semiconductor thermoelectric power generation[J]. Adv Mater Sci Eng, 2018, 2018:1210562.

[23] SOLEIMANI Z, ZORAS S, CERANIC B, et al. A review on recent developments of thermoelectric materials for room-temperature applications[J]. Sustain Energy Techn, 2020, 37:100604.

[24] KIM S I, HWANG S, ROH J W, et al. Experimental evidence of enhancement of thermoelectric properties in tellurium nanoparticleembedded bismuth antimony telluride[J]. J Mater Res, 2012, 27(19):2449-2456.

[25] TAN M, HAO L, LI H, et al. Approaching high-performance of ordered structure Sb2Te3 film via unique angular intraplanar grain boundaries[J]. Sci Rep, 2020, 10(1):5978.

[26] VENKATASUBRAMANIAN R. Lattice thermal conductivity reduction and phonon localizationlike behavior in superlattice structures[J]. Phys Rev B, 2000, 61(4):3091-3097.

[27] ZHU T J, HU L P, ZHAO X B, et al. New insights into intrinsic point defects in V2VI3 thermoelectric materials[J]. Adv Sci, 2016, 3(7):1600004.

[28] TAKASHIRI M. Thin films of bismuth-telluride-based alloys[C]//Mele Paolo, Narducci Dario, Ohta Michihiro, eds. Thermoelectric Thin Films:Materials and Devices[M]. Cham:Springer International Publishing, 2019:1-29.

[29] WITTING I T, CHASAPIS T C, RICCI F, et al. The thermoelectric properties of bismuth telluride[J]. Adv Electron Mater, 2019, 5(6):1800904.

[30] FANG T, LI X, HU C L, et al. Complex band structures and lattice dynamics of Bi2Te3-based compounds and solid solutions[J]. Adv Funct Mater, 2019, 29(28):1900677.

[31] LO??áK P, STARYZ, HORáK J, et al. Substitutional defects in Sb2Te3 crystals[J]. Phys Status Solidi A, 1989, 115(1):87-96.

[32] HORáK J, DRA?AR?, NOVOTNYR, et al. Non-stoichiometry of the crystal lattice of antimony telluride[J]. Phys Stat Sol(A), 1995,149(2):549-556.

[33] STARYZ, HORáK J, STORDEUR M, et al. Antisite defects in Sb2-xBixTe3 mixed crystals[J]. J Phys Chem Solids, 1988, 49(1):29-34.

[34] RIEGER F, KAISER K, BENDT G, et al. Low intrinsic c-axis thermal conductivity in PVD grown epitaxial Sb2Te3 films[J]. J Appl Phys,2018, 123(17):175108.

[35] GOLDSMID H J. The thermal conductivity of bismuth telluride[J].Proc Phys Soc B, 1956, 69(2):203-209.

[36] DELVES R T, BOWLEY A E, HAZELDEN D W, et al. Anisotropy of the electrical conductivity in bismuth telluride[J]. Proc Phys Soc, 1961,78(5):838-844.

[37] LEE W Y, PARK N W, AHN J Y, et al. Anisotropic behavior of the temperature-dependent thermal conductivity in p-Type bismuth antimony telluride(p-Bi0.5Sb1.5Te3)thin films[J]. J Nanoelectron Optoelectron, 2017, 12(10):1123-1128.

[38] MANZANO C V, ABAD B, ROJO M M, et al. Anisotropic effects on the thermoelectric properties of highly oriented electrodeposited Bi2Te3films[J]. Sci Rep, 2016, 6(1):19129.

[39] TAKAYAMA K, TAKASHIRI M. Multi-layered-stack thermoelectric generators using p-type Sb2Te3 and n-type Bi2Te3 thin films by radio-frequency magnetron sputtering[J]. Vacuum, 2017, 144:164-171.

[40] ZHOU A, FU Q, ZHANG W, et al. Enhancing the thermoelectric properties of the electroplated Bi2Te3 films by tuning the pulse off-to-on ratio[J]. Electrochim Acta, 2015, 178:217-224.

[41] HATSUTA N, TAKEMORI D, TAKASHIRI M. Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films[J]. J Alloys Compd,2016, 685:147-152.

[42] ROSTEK R, STEIN N, BOULANGER C. A review of electroplating for V-VI thermoelectric films:From synthesis to device integration[J].J Mater Res, 2015, 30(17):2518-2543.

[43] LAL S, GAUTAM D, RAZEEB K M. Optimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin films[J]. APL Mater, 2019, 7(3):031102.

[44] YAMASAKI I, YAMANAKA R, MIKAMI M, et al. Thermoelectric properties of Bi2Te3/Sb2Te3 superlattice structure[C]//Seventeenth International Conference on Thermoelectrics, Nagoya, Japan, 1998:210-213.

[45] MAKALA R S, JAGANNADHAM K, SALES B C. Pulsed laser deposition of Bi2Te3-based thermoelectric thin films[J]. J Appl Phys,2003, 94(6):3907-3918.

[46] SYMEOU E, NICOLAOU C, KYRATSI T, et al. Enhanced thermoelectric properties in vacuum-annealed Bi0.5Sb1.5Te3 thin films fabricated using pulsed laser deposition[J]. J Appl Phys, 2019, 125(21):215308.

[47] SCHOU J. Physical aspects of the pulsed laser deposition technique:The stoichiometric transfer of material from target to film[J]. Appl Surf Sci, 2009, 255(10):5191-5198.

[48] SHEN H, LEE S, KANG J G, et al. Thickness dependence of the electrical and thermoelectric properties of co-evaporated Sb2Te3 films[J].Appl Surf Sci, 2018, 429:115-120.

[49] TAN M, DENG Y, WANG Y. Unique hierarchical structure and high thermoelectric properties of antimony telluride pillar arrays[J]. J Nanopart Res, 2012, 14(10):1204.

[50] TAKASHIRI M, TANAKA S, MIYAZAKI K. Improved thermoelectric performance of highly-oriented nanocrystalline bismuth antimony telluride thin films[J]. Thin Solid Films, 2010, 519(2):619-624.

[51] TAN M, DENG Y, HAO Y. Multilayered structure and enhanced thermoelectric properties of Bi1.5Sb0.5Te3 film with preferential growth[J]. Phys Status Solidi A, 2013, 210(12):2611-2616.

[52] MU X, ZHOU H, HE D, et al. Enhanced electrical properties of stoichiometric Bi0.5Sb1.5Te3 film with high-crystallinity via layer-bylayer in-situ Growth[J]. Nano Energy, 2017, 33:55-64.

[53] ZHU W, DENG Y, WANG Y, et al. Preferential growth transformation of Bi0.5Sb1.5Te3 films induced by facile post-annealing process:Enhanced thermoelectric performance with layered structure[J]. Thin Solid Films, 2014, 556:270-276.

[54] TAN M, DENG Y, HAO Y. Enhanced thermoelectric properties and layered structure of Sb2Te3 films induced by special(0 0 l)crystal plane[J]. Chem Phys Lett, 2013, 584:159-164.

[55] CAO L, WANG Y, DENG Y, et al. Facile synthesis of preferential Bi0.5Sb1.5Te3.0 nanolayered thin films with high power factor by the controllable layer thickness[J]. J Nanopart Res, 2013, 15(11):2088.

[56] ZHENG Z H, FAN P, LUO J T, et al. Enhanced thermoelectric properties of antimony telluride thin films with preferred orientation prepared by sputtering a fan-shaped binary composite target[J]. J Electron Mater, 2013, 42(12):3421-3425.

[57] KIM M-Y, OH T-S. Preparation and characterization of Bi2Te3/Sb2Te3thermoelectric thin-film devices for power generation[J]. J Electron Mater, 2014, 43(6):1933-1939.

[58] TRUNG N H, SAKAMOTO K, TOAN N V, et al. Synthesis and evaluation of thick films of electrochemically deposited Bi2Te3 and Sb2Te3 thermoelectric materials[J]. Materials, 2017, 10(2):154.

[59] SCHUMACHER C, REINSBERG K G, ROSTEK R, et al.Optimizations of pulsed plated p and n-type bi2Te3-Based ternary compounds by annealing in different ambient atmospheres[J]. Adv Energy Mater, 2013, 3(1):95-104.

[60] THIET D V, QUANG N V, HAI N T M, et al. Optimizing the carrier density and thermoelectric properties of Sb2Te3 films by using the growth temperature[J]. J Korean Phys Soc, 2018, 72(8):915-919.

[61] AABDIN Z, PERANIO N, WINKLER M, et al. Sb2Te3 and Bi2Te3 thin films grown by room-temperature MBE[J]. J Electron Mater, 2012,41(6):1493-1497.

[62] SYMEOU E, PERVOLARAKI M, MIHAILESCU C N, et al.Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition[J]. Appl Surf Sci, 2015, 336:138-142.

[63] CHANG H C, CHEN C H, KUO Y K. Great enhancements in the thermoelectric power factor of BiSbTe nanostructured films with well-ordered interfaces[J]. Nanoscale, 2013, 5(15):7017-7025.

[64] LEE C W, KIM G H, CHOI J W, et al. Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate[J].Phys Status Solidi RRL, 2017, 11(6):1700029.

[65] ALAM H, RAMAKRISHNA S. A review on the enhancement of figure of merit from bulk to nano-thermoelectric materials[J]. Nano Energy, 2013, 2(2):190-212.

[66] SHUAI J, MAO J, SONG S, et al. Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties[J].Energy Environ Sci, 2017, 10(3):799-807.

[67] HU C. Modern Semiconductor Devices for Integrated circuits[M].Upper Saddle River, NJ:Prentice Hall, 2010:40-43.

[68] FAN P, ZHENG Z H, LIANG G X, et al. Thermoelectric characterization of ion beam sputtered Sb2Te3 thin films[J]. J Alloys Compd, 2010, 505(1):278-280.

[69] KIM J, LIM J H, MYUNG N V. Composition-and crystallinitydependent thermoelectric properties of ternary BixSb2-xTey films[J].Appl Surf Sci, 2018, 429:158-163.

[70] FANG B, ZENG Z G, YAN X X, et al. Effects of annealing on thermoelectric properties of Sb2Te3 thin films prepared by radio frequency magnetron sputtering[J]. J Mater Sci-Mater El, 2013, 24(4):1105-1111.

[71] JUNLABHUT P, NUTHONGKUM P, SAKULKALAVEK A, et al.Enhancing the thermoelectric properties of sputtered Sb2Te3 thick films via post-annealing treatment[J]. Surf Coat Technol, 2020, 387:125510.

[72] TYNELL T, GEISHENDORF K, PIONTEK S, et al. Rapid thermal annealing of Sb2Te3 thin films grown via atomic layer deposition[J].Thin Solid Films, 2020, 700:137922.

[73] LIN J M, CHEN Y C, YANG C F, et al. Effect of substrate temperature on the thermoelectric properties of the Sb2Te3 thin films deposition by using thermal evaporation method[J]. J Nanomater, 2015, 2015:135130.

[74] MORIKAWA S, INAMOTO T, TAKASHIRI M. Thermoelectric properties of nanocrystalline Sb2Te3 thin films:Experimental evaluation and first-principles calculation, addressing effect of crystal grain size[J]. Nanotechnology, 2018, 29(7):075701.

[75]李秦,檀柏梅,张建新,等.退火时间对Bi/Te多层薄膜结构和热电性能的影响[J].硅酸盐学报, 2016, 44(1):95-103.LI Qin, TAN Baimei, ZHANG Jianxin, et al. J Chin Ceram Soc, 2016,44(1):95-103.

[76] KIM D-H, LEE G-H, KIM O-J. The influence of post-deposition annealing on thermoelectric properties of Bi–Sb–Te films prepared by sputtering[J]. Semicond Sci Technol, 2007, 22(2):132-136.

[77] CHEN T B, FAN P, ZHENG Z H, et al. Influence of substrate temperature on structural and thermoelectric properties of antimony telluride thin films fabricated by RF and DC cosputtering[J]. J Electron Mater, 2012, 41(4):679-683.

[78] GONCALVES L M, ALPUIM P, ROLO A G, et al. Thermal co-evaporation of Sb2Te3 thin-films optimized for thermoelectric applications[J]. Thin Solid Films, 2011, 519(13):4152-4157.

[79] ZOU H, ROWE D M, WILLIAMS S G K. Peltier effect in a co-evaporated Sb2Te3(P)-Bi2Te3(N)thin film thermocouple[J]. Thin Solid Films, 2002, 408(1):270-274.

[80] SILVA L W D, KAVIANY M, UHER C. Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems[J]. J Appl Phys, 2005, 97(11):114903.

[81] WANG G Y, ENDICOTT L, UHER C. Recent advances in the growth of Bi-Sb-Te-Se thin films[J]. Sci Rep, 2011, 3(4):539-560.

[82] KHUMTONG T, SAKULKALAVEK A, SAKDANUPHAB R.Empirical modelling and optimization of pre-heat temperature and Ar flow rate using response surface methodology for stoichiometric Sb2Te3 thin films prepared by RF magnetron sputtering[J]. J Alloys Compd, 2017, 715:65-72.

[83] TAN M, DENG Y, HAO Y. Enhancement of thermoelectric properties induced by oriented nanolayer in Bi2Te2.7Se0.3 columnar films[J].Mater Chem Phys, 2014, 146(1/2):153-158.

[84] KIM D H, BYON E, LEE G H, et al. Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering[J]. Thin Solid Films, 2006, 510(1/2):148-153.

[85] LENSCH-FALK J L, BANGA D, HOPKINS P E, et al.Electrodeposition and characterization of nano-crystalline antimony telluride thin films[J]. Thin Solid Films, 2012, 520(19):6109-6117.

[86] TAN M, WANG Y, DENG Y, et al. Oriented growth of A2Te3(A=Sb,Bi)films and their devices with enhanced thermoelectric performance[J]. Sensor Actuat A-Phys, 2011, 171(2):252-259.

[87] SHEN S, ZHU W, DENG Y, et al. Enhancing thermoelectric properties of Sb2Te3 flexible thin film through microstructure control and crystal preferential orientation engineering[J]. Appl Surf Sci, 2017, 414:197-204.

[88] FAN P, LI R, CHEN Y-X, et al. High thermoelectric performance achieved in Bi0.4Sb1.6Te3 films with high(0 0 l)orientation via magnetron sputtering[J]. J Eur Ceram Soc, 2020, 40(12):4016-4021.

[89] GAYNER C, KAR K K. Recent advances in thermoelectric materials[J]. Prog Mater Sci, 2016, 83:330-382.

[90] LV S, QIAN Z, HU D, et al. A comprehensive review of strategies and approaches for enhancing the performance of thermoelectric module[J]. Energies, 2020, 13(12):3142.

[91] WEI Z, LI Z, LUO P, et al. Simultaneously increased carrier concentration and mobility in p-type Bi0.5Sb1.5Te3 throng Cd doping[J].J Alloys Compd, 2020, 830:154625.

[92]冯建林,魏长平,许洁.掺杂金属离子对Ca3Co4O9的热电性能的影响[J].硅酸盐学报, 2008, 36(11):1501-1504.FENG Jianlin, WEI Changping, XU Jie. J Chin Ceram Soc, 2008,36(11):1501-1504.

[93] TAN C, TAN X, YU B, et al. Synergistically optimized thermoelectric performance in Bi0.48Sb1.52Te3 by hot deformation and Cu doping[J].ACS Appl Energ Mater, 2019, 2(9):6714-6719.

[94] HAO F, QIU P F, SONG Q F, et al. Roles of Cu in the enhanced thermoelectric properties in Bi0.5Sb1.5Te3[J]. Materials, 2017, 10(3):251.

[95] WEI Z, WANG C, YOU L, et al. Significantly enhanced thermoelectric performance of Cu-doped p-type Bi0.5Sb1.5Te3 by a hydrothermal synthesis method[J]. RSC Adv, 2017, 7(65):41111-41116.

[96] SHI D T, WANG R P, WANG G X, et al. Enhanced thermoelectric properties in Cu-doped Sb2Te3 films[J]. Vacuum, 2017, 145:347-350.

[97] TAN M, DENG Y, WANG Y, et al. Fabrication of Highly(0 0 l)-textured Sb2Te3 film and corresponding thermoelectric device with enhanced performance[J]. J Electron Mater, 2012, 41(11):3031-3038.

[98] YANG J, YIP H-L, JEN K-Y. Rational design of advanced thermoelectric materials[J]. Adv Energy Mater, 2013, 3(5):549-565.

[99] AHMED A, HAN S. Optimizing the structural, electrical and thermoelectric properties of antimony telluride thin films deposited on aluminum nitride-coated stainless steel foil[J]. Sci Rep, 2020, 10(1):6978.

[100] GAYNER C, AMOUYAL Y. Energy filtering of charge carriers:Current trends, challenges, and prospects for thermoelectric materials[J]. Adv Funct Mater, 2020, 30(18):1901789.

[101] MINNICH A J, DRESSELHAUS M S, REN Z F, et al. Bulk nanostructured thermoelectric materials:Current research and future prospects[J]. Energy Environ Sci, 2009, 2(5):466-479.

[102] ZHANG Z Q, WU Y G, ZHANG H M, et al. Enhancement of Seebeck coefficient in Sb-rich Sb2Te3 thin film[J]. J Mater Sci-mater El, 2015,26(3):1619-1624.

[103] ZHANG Y, SNEDAKER M L, BIRKEL C S, et al. Silver-based intermetallic heterostructures in Sb2Te3 thick films with enhanced thermoelectric power factors[J]. Nano Lett, 2012, 12(2):1075-1080.

[104] KO D K, KANG Y J, MURRAY C B. Enhanced thermopower via carrier energy filtering in solution-processable Pt-Sb2Te3nanocomposites[J]. Nano Lett, 2011, 11(7):2841-2844.

[105] KIM J, LEE K H, KIM S D, et al. Simple and effective fabrication of Sb2Te3 films embedded with Ag2Te nanoprecipitates for enhanced thermoelectric performance[J]. J Mater Chem A, 2018, 6(2):349-356.

[106] ZHANG Z Q, ZHANG H M, WU Y G, et al. Optimization of the thermopower of antimony telluride thin film by introducing tellurium nanoparticles[J]. Appl Phys A-Mater, 2015, 118(3):1043-1051.

[107] YOO I J, SONG Y, LIM D C, et al. Thermoelectric characteristics of Sb2Te3 thin films formed via surfactant-assisted electrodeposition[J].J Mater Chem A, 2013, 1(17):5430-5435.

[108]陈立东,刘睿恒,史迅.热电材料与器件[M].北京:科学出版社,2018:34-39.

[109] KIM M-Y, OH T-S. Crystallization behavior and thermoelectric characteristics of the electrodeposited Sb2Te3 thin films[J]. Thin Solid Films, 2010, 518(22):6550-6553.

[110] KIM J, ZHANG M, BOSZE W, et al. Maximizing thermoelectric properties by nanoinclusion ofγ-SbTe in Sb2Te3 film via solid-state phase transition from amorphous Sb-Te electrodeposits[J]. Nano Energy, 2015, 13:727-734.

[111] KIM J, JUNG H, LIM J H, et al. Facile control of interfacial energy-barrier scattering in antimony telluride electrodeposits[J]. J Electron Mater, 2017, 46(4):2347-2355.

[112] LIM S K, KIM M Y, OH T S. Thermoelectric properties of the bismuth-antimony-telluride and the antimony-telluride films processed by electrodeposition for micro-device applications[J]. Thin Solid Films, 2009, 517(14):4199-4203.

[113] BOTTNER H, CHEN G, VENKATASUBRAMANIAN R. Aspects of thin-film superlattice thermoelectric materials, devices, and applications[J]. MRS Bull, 2006, 31(3):211-217.

[114] WINKLER M, LIU X, SCHURMANN U, et al. Current status in fabrication, structural and transport property characterization, and theoretical understanding of Bi2Te3/Sb2Te3 superlattice systems[J]. Z Anorg Allg Chem, 2012, 638(15):2441-2454.

[115] VENKATASUBRAMANIAN R, COLPITTS T, WATKO E, et al.Experimental evidence of high power factors and low thermal conductivity in Bi2Te3/Sb2Te3 superlattice thin-films[C]//Fifteenth International Conference on Thermoelectrics, Pasadena, USA, 1996:454-458.

[116] VENKATASUBRAMANIAN R, SIIVOLA E, COLPITTS T, et al.Thin-film thermoelectric devices with high room-temperature figures of merit[J]. Nature, 2001, 413(6856):597-602.

[117] HANSEN A L, DANKWORT T, WINKLER M, et al. Synthesis and thermal instability of high-quality Bi2Te3/Sb2Te3 Super lattice thin film thermoelectrics[J]. Chem Mater, 2014, 26(22):6518-6522.

[118] KONIG J D, WINKLER M, BULLER S, et al. Bi2Te3-Sb2Te3superlattices grown by nanoalloying[J]. J Electron Mater, 2011, 40(5):1266-1270.

[119] BANGA D, LENSCH-FALK J L, MEDLIN D L, et al. Periodic modulation of Sb stoichiometry in Bi2Te3/Bi2–xSbxTe3 multilayers using pulsed electrodeposition[J]. Cryst Growth Des, 2012, 12(3):1347-1353.

[120] PARK N W, LEE W Y, YOON Y S, et al. Achieving out-of-plane thermoelectric figure of merit ZT=1.44 in a p-type Bi2Te3/Bi0.5Sb1.5Te3superlattice film with low interfacial resistance[J]. ACS Appl Mater Interfaces, 2019, 11(41):38247-38254.

[121] VENKATASUBRAMANIAN R, COLPITTS T, WATKO E, et al.MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications[J]. J Cryst Growth, 1997,170(1-4):817-821.

[122] VENKATASUBRAMANIAN R, COLPITTS T. Enhancement in figure-of-merit with superlattice structures for thin-film thermoelectric devices[J]. MRS Proceedings, 1997, 478:73-84.

[123] CHEN G. Phonon transport in low dimensional[C]//Tritt T Med.Recent Treads in Thermoelectric Materials ResearchⅢ. New York:Elsevier, 2001:203-259.

[124] CHEN G. Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlattices[J]. Phys Rev B, 1998, 57(23):14958-14973.

[125] CHEN G, NEAGU M. Thermal conductivity and heat transfer in superlattices[J]. Appl Phys Lett, 1997, 71(19):2761-2763.

[126] SIMKIN M V, MAHAN G D. Minimum thermal conductivity of superlattices[J]. Phys Rev Lett, 2000, 84(5):927-930.

[127] LUCKYANOVA M N, GARG J, ESFARJANI K, et al. Coherent phonon heat conduction in superlattices[J]. Science, 2012, 338(6109):936-939.

[128] GARG J, CHEN G. Minimum thermal conductivity in superlattices:A first-principles formalism[J]. Phys Rev B, 2013, 87(14):140302.

[129] TOUZELBAEV M N, ZHOU P, VENKATASUBRAMANIAN R, et al. Thermal characterization of Bi2Te3/Sb2Te3 superlattices[J]. J Appl Phys, 2001, 90(2):763-767.

[130] MOYZHES B, NEMCHINSKY V. Thermoelectric figure of merit of metal–semiconductor barrier structure based on energy relaxation length[J]. Appl Phys Lett, 1998, 73(13):1895-1897.

[131] SHAKOURI A, BOWERS J E. Heterostructure integrated thermionic coolers[J]. Appl Phys Lett, 1997, 71(9):1234-1236.

[132] HICKS L D, DRESSELHAUS M S. Effect of quantum-well structures on the thermoelectric figure of merit[J]. Phys Rev B, 1993, 47(19):12727-12731.

[133] JIN H, LI J, IOCOZZIA J, et al. Hybrid organic-inorganic thermoelectric materials and devices[J]. Angew Chem Int Edit, 2019,58(43):15206-15226.

[134] CHEN S, LI F, CHEN Y X, et al. Enhanced thermoelectric properties of Sb2Te3/CH3NH3I hybrid thin films by post-annealing[J]. Inorg Chem Front, 2020, 7(1):198-203.

[135] WEI M, CHEN T-B, HU J-G, et al. Effect of organic nano-components on the thermoelectric properties of Sb2Te3nanocrystal thin film[J]. Scripta Mater, 2020, 185:105-110.

[136] JIANG J, CHEN L, BAI S, et al. Thermoelectric properties of p-type(Bi2Te3)x(Sb2Te3)1-x crystals prepared via zone melting[J]. J Cryst Growth, 2005, 277(1):258-263.

[137] RIEGER F, RODDATIS V, KAISER K, et al. Transition into a phonon glass in crystalline thermoelectric(Sb1-xBix)2Te3 films[J]. Phys Rev Mater, 2020, 4(2):025402.

[138] WANG H, CHU W, CHEN G. A brief review on measuring methods of thermal conductivity of organic and hybrid thermoelectric materials[J]. Adv Electron Mater, 2019, 5(11):1900167.

[139] ABAD B, BORCA-TASCIUC D A, MARTIN-GONZALEZ M S.Non-contact methods for thermal properties measurement[J]. Renew Sust Energ Rev, 2017, 76:1348-1370.

[140] TAN G, ZHAO L D, KANATZIDIS M G. Rationally designing high-performance bulk thermoelectric materials[J]. Chem Rev, 2016,116(19):12123-12149.

[141] LI J F, LIU W S, ZHAO L D, et al. High-performance nanostructured thermoelectric materials[J]. NPG Asia Mater, 2010, 2(4):152-158.

[142] ZHOU M, LI J F, KITA T. Nanostructured AgPbmSbTem+2 system bulk materials with enhanced thermoelectric performance[J]. J Am Chem Soc, 2008, 130(13):4527-4532.

[143]陈立东,熊震,柏胜强,等.纳米复合热电材料研究进展[J].无机材料学报, 2010, 25(6):561-568.CHEN Lidong, Xiong Zhen, BAI Shengqiang, et al. J Inorg Mater(in Chinese), 2010, 25(6):561-568.

[144] DRESSELHAUS M S, CHEN G, TANG M Y, et al. New directions for low-dimensional thermoelectric materials[J]. Adv Mater, 2007,19(8):1043-1053.

[145] STARK I. Micro Thermoelectric Generators[C]//Brand O, Fedder G K, Hierold C, eds. Micro Energy Harvesting. John Wiley&Sons,2015:245-269.

[146] GLATZ W, SCHWYTER E, DURRER L, et al. Bi2Te3-based flexible micro thermoelectric generator with optimized design[J]. J Microelectromech S, 2009, 18(3):763-772.

[147]陈立东,刘睿恒,史迅.热电材料与器件[M].北京:科学出版社,2018:163-189.

[148]张骐昊,柏胜强,陈立东,等.热电发电器件与应用技术:现状、挑战与展望[J].无机材料学报, 2019, 34(3):279-293.ZHANG Qihao, BAI Shengqiang, CHEN Lidong, et al. J Inorg Mater(in Chinese), 2019, 34(3):279-293.

[149] LIN Y-C, YANG C-L, HUANG J-Y, et al. Low-temperature bonding of Bi0.5Sb1.5Te3 thermoelectric material with Cu electrodes using a thin-film In interlayer[J]. Metall Mater Trans A, 2016, 47(9):4767-4776.

[150] SHI X-L, ZOU J, CHEN Z-G. Advanced thermoelectric design:From materials and structures to devices[J]. Chem Rev, 2020, 120(15):7399-7515.

[151]张骐昊,刘睿恒,廖锦城,等.填充方钴矿热电器件的结构优化设计与性能[J].硅酸盐学报, 2021, 49(2):1-9.ZHANG Qihao, LIU Ruiheng, LIAO Jincheng, et al. J Chin Ceram Soc, 2021, 49(2):1-9.

[152] BAE N-H, HAN S, LEE K E, et al. Diffusion at interfaces of micro thermoelectric devices[J]. Curr Appl Phys, 2011, 11(5):S40-S44.

[153] MING G, JIEHUA W, JINCHENG L, et al. A high-throughput strategy to screen interfacial diffusion barrier materials for thermoelectric modules[J]. J Mater Res, 2019, 34(7):1179-1187.

[154]陈立东,刘睿恒,史迅.热电材料与器件[M].北京:科学出版社,2018:54-58.

[155] van der PAUW L J. A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape[J]. Philips Techn Rev, 1958,20:220-224.

[156] HEANEY M B. Electrical conductivity and resistivity[C]//WEBSTER J G, ed. The measurement, instrumentation and sensors handbook. Bosa Roca, United States:Springer Science&Business Media, 2000:1332-1345.

[157] WANG C, CHEN F, SUN K, et al. Contributed Review:Instruments for measuring Seebeck coefficient of thin film thermoelectric materials:A mini-review[J]. Rev Sci Instrum, 2018, 89(10):101501.

[158] ZHOU Y, YANG D, LI L, et al. Fast Seebeck coefficient measurement based on dynamic method[J]. Rev Sci Instrum, 2014, 85(5):054904.

基本信息:

DOI:10.14062/j.issn.0454-5648.20200617

中图分类号:TB383.2

引用信息:

[1]易文,赵永杰,王伯宇,等.Sb_2Te_3基热电薄膜的研究进展[J].硅酸盐学报,2021,49(06):1111-1124.DOI:10.14062/j.issn.0454-5648.20200617.

基金信息:

国家自然科学基金(51972029); 国家重点研发计划

投稿时间:

2020-08-17

投稿日期(年):

2020

修回时间:

2021-04-26

终审时间:

2021-04-13

终审日期(年):

2021

审稿周期(年):

1

发布时间:

2021-04-06

出版时间:

2021-04-06

网络发布时间:

2021-04-06

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