| 637 | 7 | 89 |
| 下载次数 | 被引频次 | 阅读次数 |
硫系玻璃由于具有较高的折射率、宽的红外波段透明窗口、较低的非线性损耗和较快的非线性响应,在光学器件领域具有巨大的应用潜力。随着近年来微纳器件加工技术的进步,基于硫系玻璃制备的新型微纳光子器件,在通信、安全、医疗、环境等领域得到了广泛的应用。本工作从硫系玻璃的物理光学性质出发,就硫系玻璃的薄膜制备工艺、微纳器件加工方法、光学器件应用及发展前景分别展开论述。
Abstract：Chalcogenide glass possesses significant potentials for applications in photonic devices due to its high refractive index,wide infrared transparency window, low nonlinear loss, and fast nonlinear response. With the development of nanofabrication technology in recent years, novel micro/nano photonic devices based on chalcogenide glass have been widely used in the fields of telecommunication, security, medical and environmental applications. In this review, recent work on the preparation technologies of chalcogenide glass thin films, micro-/nano-device fabrication methods, the application and future prospects of chalcogenide glass optical devices was represented, respectively, based on the physical and optical properties of chalcogenide glasses.
[1]陈瑞,柳夏,王虹,等.从亚波长光栅到超构光栅原理设计及应用[J].红外与激光工程, 2020, 49(9):20201039.CHEN R, LIU X, WANG H, et al. Infr Laser Eng(in Chinese), 2020,49(9):20201039.
[2]叶羽婷,马辉,孙春雷,等.柔性光子材料与器件的研究进展[J].激光与光电子学进展, 2020, 57(3):030001.YE Y, MA H, SUN C, et al. Laser Optoelectron Prog(in Chinese),2020, 57(3):030001
[3] ZHANG X, LIU Y, LEE S T, et al. Coupling surface plasmon resonance of gold nanoparticles with slow-photon-effect of TiO2photonic crystals for synergistically enhanced photoelectrochemical water splitting[J]. Energy Environ Sci, 2014, 7(4):1409–1419.
[4] WU C, ARJU N, KELP G, et al. Spectrally selective chiral silicon metasurfaces based on infrared fano resonances[J]. Nat Commun,2014, 5(1):3892.
[5] MOSS D J, MORANDOTTI R, GAETA A L, et al. New CMOS-compatible platforms based on silicon nitride and hydex for nonlinear optics[J]. Nat Photon, 2013, 7(8):597–607.
[6] NEO R, SCHROEDER J, PAQUOT Y, et al. Phase-sensitive amplification of light in aχ(3)photonic chip using a dispersion engineered chalcogenide ridge waveguide[J]. Opt Express, 2013,21(7):7926–7933.
[7] SCHOLTZ L U, LADANYI L, MULLEROVA J. Numerically analyzed spectral and temporal management of all-optical switching based on chalcogenide bistable fiber bragg gratings[J]. Opt Quant Electron, 2017, 49(2):48.
[8] HAFFNER C, CHELLADURAI D, FEDORYSHYN Y, et al.Low-loss plasmon-assisted electro-optic modulator[J]. Nature, 2018,556(7702):483–486.
[9] SMITH D R, PENDRY J B, WILTSHIRE M C K. Metamaterials and negative refractive index[J]. Science, 2004, 305(5685):788–792.
[10] CAI W S, CHETTIAR U K, KILDISHEV A V, et al. Optical cloaking with metamaterials[J]. Nat Photonics, 2007, 1(4):224–227.
[11] SIMPSON R E, FONS P, KOLOBOV A V, et al. Interfacial phase-change memory[J]. Nat Nanotechnol, 2011, 6(8):501–505.
[12] ORAVA J, GREER A L, GHOLIPOUR B, et al. Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers[J]. Appl Phys Lett, 2012, 101(9):091906.
[13] CHILES J, FATHPOUR S. Silicon photonics beyond silicon-oninsulator[J]. J Optics, 2017, 19(5):13.
[14] SEDDON A B. Chalcogenide glass–a review of their preparation,properties and application[J]. J Non Cryst Solids, 1995, 184:44–50.
[15] FENG X, MAIRAJ A K, HEWAK D W, et al. Nonsilica glasses for holey fibers[J]. J Lightwave Technol, 2005, 23(6):2046.
[16] ZHANG Y, CHOU J B, LI J, et al. Broadband transparent optical phase change materials for high-performance nonvolatile photonics[J].Nat Commun, 2019, 10(1):4279.
[17] YUAN W. 2–10μm mid-infrared supercontinuum generation in As2Se3 photonic crystal fiber[J]. Laser Phys Lett, 2013, 10(9):095107.
[18] SHENG X, BOWER C A, BONAFEDE S, et al. Printing-based assembly of quadruple-junction four-terminal microscale solar cells and their use in high-efficiency modules[J]. Nat Mater, 2014, 13(6):593–598.
[19] MADDEN S J, CHOI D Y, BULLA D A, et al. Long, low loss etched As2S3 chalcogenide waveguides for all-optical signal regeneration[J].Opt Express, 2007, 15(22):14414–14421.
[20] DUCHESNE D, FERRERA M, RAZZARI L, et al. Efficient self-phase modulation in low loss, high index doped silica glass integrated waveguides[J]. Opt Express, 2009, 17(3):1865–1870.
[21] FU L B, ROCHETTE M, TA'EED V G, et al. Investigation of self-phase modulation based optical regeneration in single mode As2Se3 chalcogenide glass fiber[J]. Opt Express, 2005, 13:7637–7644.
[22] RUAN Y, LI W, JARVIS R, et al. Fabrication and characterization of low loss rib chalcogenide waveguides made by dry etching[J]. Opt Express, 2004, 12(21):5140–5145.
[23] ASOBE M, KANAMORI T, NAGANUMA K, et al. Third-order nonlinear spectroscopy in As2S3 chalcogenide glass fibers[J]. J Appl Phys, 1995, 77(11):5518–5523.
[24] LIU Q, RAMIREZ J M, VAKARIN V, et al. On-chip bragg grating waveguides and fabry-perot resonators for long-wave infrared operation up to 8. 4μm[J]. Opt Express, 2018, 26(26):34366–34372.
[25] LONG M, GAO A, WANG P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus[J]. Sci Adv, 2017, 3(6):1700589.
[26] MASSELIN P, BYCHKOV E, LE C. Ultrafast laser inscription of high-performance mid-infrared waveguides in chalcogenide glass[J].IEEE Photon Technol Lett, 2018, 30(24):2123–2126.
[27] LIU B, KOEPF M, ABBAS A N, et al. Black arsenic-phosphorus:layered anisotropic infrared semiconductors with highly tunable compositions and properties[J]. Adv Mater, 2015, 27(30):4423–4429.
[28] LIU Q K, RAMIREZ J M, VAKARIN V, et al. Mid-infrared sensing between 5. 2 and 6. 6μm wavelengths using Ge-rich Sige waveguides invited[J]. Opt Mater Express, 2018, 8(5):1305–1312.
[29] MARIA MARGARIT J, VERGARA G, VILLAMAYOR V, et al. A 2Kfps sub-μW/pix uncooled-PbSe digital imager with 10 bit DR adjustment and fpn correction for high-speed and low-cost MWIR applications[J]. IEEE J Solid-St Circ, 2015, 50(10):2394–2405.
[30] VIENS J F, MENEGHINI C, VILLENEUVE A, et al. Fabrication and characterization of integrated optical waveguides in sulfide chalcogenide glasses[J]. J Lightwave Technol, 1999, 17(7):1184–1191.
[31] MAILOA J P, AKEY A J, SIMMONS C B, et al. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon[J]. Nat Commun, 2014(5):4011
[32] MALIK A, MUNEEB M, SHIMURA Y, et al. Germanium-on-silicon mid-infrared waveguides and Mach-Zehnder interferometers[C]. 2013IEEE Photonics Conference, Bellevue, WA, USA, 2013:104–105.
[33] CHERN G C, LAUKS I, NORIAN K H. Spin-coated amorphous chalcogenide films:Photoinduced effects[J]. Thin Solid Films, 1985,123(4):289–296.
[34] KOHOUTEK T, WAGNER T, ORAVA J, et al. Amorphous films of Ag–As–S system prepared by spin-coating technique, preparation techniques and films physico-chemical properties[J]. Vacuum, 2004,76(23):191–194.
[35]潘瑞琨.脉冲激光沉积法制备硫系玻璃薄膜的结构与光学性质研究[D].武汉：武汉理工大学, 2010.PAN Ruikun. Study on structure and optical properties of pulsed laser deposted amorphous chalcogenide films(in Chinese, dissertation).Wuhan:Wuhan University of Technology, 2010.
[36] BULLA D A P, WANG R P, PRASAD A, et al. On the properties and stability of thermally evaporated Ge—As—Se thin films[J]. Appl Phys A–Mater Sci, 2009, 96(3):615–625.
[37] HAFIZ M M, EL–SHAZLY O, KINAWY N. Reversible phase change in Bix Se100–x chalcogenide thin films for using as optical recording medium[J]. Appl Surf Sci, 2001, 171(3):231–241.
[38] KLEIN R M. Chalcogenide glasses as passive thin film structures for integrated optics[J]. J Electron Mater, 1974, 3(1):79–99.
[39] BESSONOV A F, GUDZENKO A I, DERYUGIN L N, et al.Thin-film chalcogenide glass waveguide for medium infrared range[J].Soviet J Quantum Electr, 1976, 6(10):1248–1249.
[40] GAI X, MADDEN S, CHOI D Y, et al. Dispersion engineered Ge11.5As24Se64. 5 nanowires with a nonlinear parameter of 136 W–1·m–1 at1550 nm[J]. Opt Express, 2010, 18(18):18866–18874.
[41] KROGSTAD M R, AHN S, PARK W, et al. Optical characterization of chalcogenide Ge—Sb—Se waveguides at telecom wavelengths[J].IEEE Photon Technol Lett, 2016, 28(23):2720–2723.
[42] SHEN B, LIN H, MERGET F, et al. Broadband couplers for hybrid silicon-chalcogenide glass photonic integrated circuits[J]. Opt Express,2019, 27(10):13781–13792.
[43] CHEN Z, WAN L, SONG J, et al. Optical, mechanical and thermal characterizations of suspended chalcogenide glass microdisk membrane[J]. Opt Express, 2019, 27(11):15918–15925.
[44] HU J, TARASOV V, AGARWAL A, et al. Fabrication and testing of planar chalcogenide waveguide integrated microfluidic sensor[J]. Opt Express, 2007, 15(5):2307–2314.
[45] CHILES J, MALINOWSKI M, RAO A, et al. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching[J].Appl Phys Lett, 2015, 106(11):111110.
[46] DU Q, HUANG Y, LI J, et al. Low-loss photonic device in Ge—Sb—S chalcogenide glass[J]. Opt Lett, 2016, 41(13):3090–3093.
[47] ZHOU J, DU Q, XU P, et al. Large nonlinearity and low loss Ge—Sb—Se glass photonic devices in near-infrared[J]. IEEE J Sel Top Quantum Electron, 2018, 24(4):1–6.
[48] MADDEN S J, CHOI D Y, BULLA D A, et al. Long, low loss etched As2S3 chalcogenide waveguides for all-optical signal regeneration[J].Opt Express, 2007, 15(22):14414–14421.
[49] ZHU Y, WAN L, CHEN Z, et al. Effects of shallow suspension in low-loss waveguide-integrated chalcogenide microdisk resonators[J].J Lightwave Technol, 2020, 38(17):4817–4823.
[50] SHEN W, ZENG P, YANG Z, et al. Chalcogenide glass photonic integration for improved 2μm optical interconnection[J]. Photon Res,2020, 8(9):1484–1490.
[51] ZHAO Y, LI C, GUO P, et al. Exploration of lift-off Ge—As—Se chalcogenide waveguides with thermal reflow process[J]. Opt Mater,2019, 92:206–211.
[52] FRANTZ J A, SHAW L B, SANGHERA J S, et al. Waveguide amplifiers in sputtered films of Er3+-doped gallium lanthanum sulfide glass[J]. Opt Express, 2006, 14(5):1797–1803.
[53] HU J, TARASOV V, CARLIE N, et al. Si–CMOS–compatible lift-off fabrication of low-loss planar chalcogenide waveguides[J]. Opt Express, 2007, 15(19):11798–11807.
[54] KROGSTAD M R, AHN S, PARK W, et al. Nonlinear characterization of Ge28Sb12Se60 bulk and waveguide devices[J]. Opt Express, 2015, 23(6):7870–7878.
[55] LI C, GUO P, HUANG W, et al. Reverse-strip-structure Ge28Sb12Se60chalcogenide glass waveguides prepared by micro-trench filling and lift-off[J]. J Opt Soc Am B, 2019, 37(1).
[56] MORRIS J M, MACKENZIE M D, PETERSEN C R, et al.Ge22As20Se58 glass ultrafast laser inscribed waveguides for mid-IR integrated optics[J]. Opt Mater Express, 2018, 8(4):1001–1011.
[57] PAN W J, ROWE H, ZHANG D, et al. One-step hot embossing of optical rib waveguides in chalcogenide glasses[J]. Microw Opt Technol Lett, 2008, 50(7):1961–1963.
[58] TSAY C, ZHA Y, ARNOLD C B. Solution-processed chalcogenide glass for integrated single-mode mid-infrared waveguides[J]. Opt Express, 2010, 18(25):26744–26753.
[59] HAN T, MADDEN S, DEBBARMA S, et al. Improved method for hot embossing As2S3 waveguides employing a thermally stable chalcogenide coating[J]. Opt Express, 2011, 19(25):25447–25453.
[60] ZOU Y, ZHANG D, LIN H, et al. High-performance, high-indexcontrast chalcogenide glass photonics on silicon and unconventional non-planar substrates[J]. Adv Opt Mater, 2014, 2(5):478–486.
[61] ZOU Y, MOREEL L, LIN H, et al. Solution processing and resist-free nanoimprint fabrication of thin film chalcogenide glass devices:Inorganic–organic hybrid photonic integration[J]. Adv Opt Mater,2014, 2(8):759–764.
[62] ABDELMONEIM N S, MELLOR C J, BENSON T M, et al.Fabrication of stable, low optical loss rib-waveguides via embossing of sputtered chalcogenide glass-film on glass-chip[J]. Opt Quantum Electron, 2015, 47(2):351–361.
[63] ZHANG P, ZHAO Z, ZENG J, et al. Fabrication and characterization of Ge20As20Se15Te45 chalcogenide glass for photonic crystal by nanoimprint lithography[J]. Opt Mater Express, 2016, 6(6):1853–1860.
[64] KORNASZEWSKI L, GAYRAUD N, STONE J M, et al.Mid-infrared methane detection in a photonic bandgap fiber using a broadband optical parametric oscillator[J]. Opt Express, 2007, 15(18):11219–11224.
[65] HO N, PHILLIPS M C, QIAO H, et al. Single-mode low-loss chalcogenide glass waveguides for the mid-infrared[J]. Opt Lett, 2006,31(12):1860–1862.
[66] DECKOFF J S, WANG Y, LIN H, et al. Tellurene:A multifunctional material for midinfrared optoelectronics[J]. ACS Photon, 2019, 6(7):1632–1638.
[67] LIN H, LI L, ZOU Y, et al. Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators[J]. Opt Lett, 2013, 38(9):1470–1472.
[68] GUTIERREZ–ARROYO A, BAUDET E, BODIOU L, et al. Optical characterization at 7.7 micron of an integrated platform based on chalcogenide waveguides for sensing applications in the midinfrared[J]. Opt Express, 2016, 24(20):23109–23117.
[69] STARECKI F, CHARPENTIER F, DOUALAN J L, et al. Mid-IR optical sensor for CO2 detection based on fluorescence absorbance of Dy3+:Ga5Ge20Sb10S65 fibers[J]. Sensors Actuat B–Chem, 2015, 207:518–525.
[70] STARECKI F, MORAIS S, CHAHAL R, et al. IR emitting Dy3+doped chalcogenide fibers for in situ CO2 monitoring in high pressure microsystems[J]. Int J Greenh Gas Control, 2016, 55:36–41.
[71] WANG L L, MA W Q, ZHANG P Q, et al. Mid-infrared gas detection using a chalcogenide suspended-core fiber[J]. J Lightwave Technol,2019, 37(20):5193–5198.
[72] SU P, HAN Z, KITA D, et al. Monolithic on-chip mid-IR methane gas sensor with waveguide-integrated detector[J]. Appl Phys Lett, 2019,114(5):051103.
[73] KURIAKOSE T, BAUDET E, HALENKOVIC T, et al. Measurement of ultrafast optical Kerr effect of Ge—Sb—Se chalcogenide slab waveguides by the beam self-trapping technique[J]. Opt Commun,2017, 403:352–357.
[74] HALENKOVIC T, GUTWIRTH J, KURIAKOSE T, et al. Linear and nonlinear optical properties of co-sputtered Ge—Sb—Se amorphous thin films[J]. Opt Lett, 2020, 45(6):1523–1526.
[75] ALMEIDA J M P, BARBANO E C, ARNOLD C B, et al. Nonlinear optical waveguides in As2S3–Ag2S chalcogenide glass thin films[J].Opt Mater Express, 2016, 7(1):93–99.
[76] ZHANG B, GUO W, YU Y, et al. Low loss, high NA chalcogenide glass fibers for broadband mid-infrared supercontinuum generation[J].J Am Ceram Soc, 2015, 98(5):1389–1392.
[77] ZHANG B, YU Y, ZHAI C, et al. High brightness 2. 2–12μm mid-infrared supercontinuum generation in a nontoxic chalcogenide step-index fiber[J]. J Am Ceram Soc, 2016, 99(8):2565–2568.
[78] YU Y, ZHANG B, GAI X, et al. 1. 8–10μm mid-infrared supercontinuum generated in a step-index chalcogenide fiber using low peak pump power[J]. Opt Lett, 2015, 40(6):1081–1084.
[79] WANG Y Y, DAI S X, LI G T, et al. 1. 4–7. 2μm broadband supercontinuum generation in an As—S chalcogenide tapered fiber pumped in the normal dispersion regime[J]. Opt Lett, 2017, 42(17):3458–3461.
[80] YU Y, GAI X, MA P, et al. Experimental demonstration of linearly polarized 2–10μm supercontinuum generation in a chalcogenide rib waveguide[J]. Opt Lett, 2016, 41(5):958–961.
[81] SERNA S, LIN H, ALONSO–RAMOS C, et al. Nonlinear optical properties of integrated Ge SbS chalcogenide waveguides[J]. Photon Res, 2018, 6(5):37–42.
[82] DELCOURT E, JEBALI N, BODIOU L, et al. Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide[J]. Opt Mater Express, 2020, 10(6):1440–1451.
[83] OVSHINSKY S. Reversible electrical switching phenomena in disordered structures[J]. Phys Rev Lett, 1968, 21:1453.
[84] PELLIZZER F, BENVENUTI A, GLEIXNER B, et al. A 90 nm phase change memory technology for stand–alone non-volatile memory applications[C] 2006 Symposium on VLSI Technology, USA, 2006:122–123.
[85] SERVALLI G. A 45 nm generation phase change memory technology[C]. 2009 IEEE International Electron Devices Meeting(IEDM), Baltimore, USA, 2009:1–4
[86] PERNICE W, BHASKARAN H. Photonic non-volatile memories using phase change materials[J]. Appl Phys Lett, 2012, 101:171101.
[87] RíOS C, STEGMAIER M, HOSSEINI P, et al. Integrated all-photonic non-volatile multi-level memory[J]. Nat Photon, 2015, 9(11):725–732.
[88] VON K, FELDMANN J, GRUHLER N, et al. Reconfigurable nanophotonic cavities with nonvolatile response[J]. ACS Photon,2018, 5(11):4644–4649.
[89] CHENG Z, RIOS C, YOUNGBLOOD N, et al. Device-level photonic memories and logic applications using phase-change materials[J]. Adv Mater, 2018, 30:1802435.
[90] LI X, YOUNGBLOOD N, RíOS C, et al. Fast and reliable storage using a 5?bit, nonvolatile photonic memory cell[J]. Optica, 2018, 6(1):1–6.
[91] FELDMANN J, STEGMAIER M, GRUHLER N, et al. Calculating with light using a chip-scale all-optical abacus[J]. Nat Commun, 2017,8:8.
[92] RIOS C, YOUNGBLOOD N, CHENG Z G, et al. In-memory computing on a photonic platform[J]. Sci Adv, 2019, 5(2):5759.
[93] FELDMANN J, YOUNGBLOOD N, KARPOV M, et al. Parallel convolutional processing using an integrated photonic tensor core[J].Nature, 2021, 589(7840):52–58.
[94] CHENG Z, RIOS C, PERNICE W H P, et al. On-chip photonic synapse[J]. Sci Adv, 2017, 3(9)1700160.
[95] FELDMANN J, YOUNGBLOOD N, WRIGHT C D, et al. All-optical spiking neurosynaptic networks with self-learning capabilities[J].Nature, 2019, 569(7755):208–214.
[96] TITTL A, MICHEL A K U, SCHAFERLING M, et al. A switchable mid-infrared plasmonic perfect absorber with multispectral thermal imaging capability[J]. Adv Mater, 2015, 27(31):4597–4603.
[97] DU K K, LI Q, LYU Y B, et al. Control over emissivity of zero-static–power thermal emitters based on phase-changing material GST[J]. Light Sci Appl, 2017, 6(1):16194.
[98] KARVOUNIS A, GHOLIPOUR B, MACDONALD K F, et al.All-dielectric phase-change reconfigurable metasurface[J]. Appl Phys Lett, 2016, 109(5):051103.
[99] POGREBNYAKOV A, BOSSARD J, TURPIN J, et al.Reconfigurable near-IR metasurface based on Ge2Sb2Te5phase-change material[J]. Opt Mater Express, 2018, 8:2264.
[100] YIN X H, STEINLE T, HUANG L L, et al. Beam switching and bifocal zoom lensing using active plasmonic metasurfaces[J]. Light Sci Appl, 2017, 6:17016.
[101] LIN H, SONG Y, HUANG Y, et al. Chalcogenide glass-on-graphene photonics[J]. Nat Photon, 2017, 11(12):798–805.
[102] DECKOFF–JONES S, LIN H, KITA D, et al. Chalcogenide glass waveguide-integrated black phosphorus mid-infrared photodetectors[J]. J Opt, 2018, 20(4):044004.
[103] LI L, LIN H, QIAO S, et al. Integrated flexible chalcogenide glass photonic devices[J]. Nat Photon, 2014, 8(8):643–649.
[104] LI L, LIN H, QIAO S, et al. Monolithically integrated stretchable photonics[J]. Light Sci Appl, 2018, 7(2):17138.
[105] LI L, LIN H, HUANG Y, et al. High-performance flexible waveguide-integrated photodetectors[J]. Optica, 2018, 5:44–51.
[106] DAUS A, HAN S, KNOBELSPIES S, et al. Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4semiconductors[C]. 2017 IEEE International Electron Devices Meeting(IEDM), San Francisco, USA, 2017:8. 1. 1–8. 1. 4
[107] LI L, ZOU Y, LIN H, et al. A fully-integrated flexible photonic platform for chip-to-chip optical interconnects[J]. J Lightwave Technol, 2013, 31(24):4080–4086.
[108] VENTURA A, SLIMEN F B, LOUSTEAU J, et al. Flexible mid-IR fiber bundle for thermal imaging of inaccessible areas[J]. Opt Express,2019, 27(15):20259.
基本信息:
DOI：10.14062/j.issn.0454-5648.20210143
中图分类号:TN256
引用信息:
[1]菅佳玲,叶羽婷,李钧颖,等.基于硫系玻璃的微纳光子器件研究进展[J].硅酸盐学报,2021,49(12):2676-2690.DOI:10.14062/j.issn.0454-5648.20210143.
基金信息:
国家自然科学基金(62175202,12104375,91950204); 西湖大学启动基金
2021-02-25
2021
2021-10-28
2021-04-22
2021
1
2021-10-29
2021-10-29
2021-10-29